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After 40+ years you would think I would know this, somehow it never came up, but for the life of me I don't see it.

Typical transistors specs list a plethora of values but one that always seems to be missing is \$I_{b_{MAX}}\$. That is, the maximum current you can pass through the base emitter junction.

Obviously you can't exceed the power rating across the base-emitter diode forward drop, so 626mW/0.7V ~ 900mA, but I have a feeling there is a fusing number for the bonding wire. Perhaps it is the same as the max collector current.. 200mA.

What number is the right one, if any?

Trevor_G
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2 Answers2

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Aside from the answers here the NXP BC847 lists a maximum Ibm as 100mA for a <= 1ms pulse.

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It is less than the maximum collector current under the same conditions.

Spehro Pefhany
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The assembly house will use the same size bond wire for all 3 leads. Unless the base metallization from bond-pad into the base region has narrow metal, I'd use the same # as emitter or collector. Some old datasheets would, with pride, show die photos.

analogsystemsrf
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