I have a power P-channel MOSFET that can produce a max of -34 A and whose datasheet does not include parameters W or L. How can I model this PMOS without W or L if I only have \$R_{DS_{on}} \$ and \$Q_g \$?
2 Answers
To model the P-MOS transistor in LTspice you do not need to know the \$W\$ and \$L\$.
The simples model used the \$K\$ factor and \$V_{TH}\$.
The drain currency is equal to:
$$I_D = \frac{K}{2}(V_{GS} - V_{TH})^2$$
And using the datascheetplot, we can also find \$V_{TH}\$ using this equation:
$$V_{TH} = \frac {V_{GS1} \sqrt{I_{D2}} -V_{GS2} \sqrt{I_{D1}}}{\sqrt{I_{D2}} - \sqrt{I_{D1}}} $$
And \$K\$ factor:
$$K=\left ( \frac{\sqrt{2I_{D1}}-\sqrt{2I_{D2}}}{V_{GS1} - V_{GS2}} \right )^2$$
For example, if we used the datasheet http://www.irf.com/product-info/datasheets/data/irf9z24n.pdf
We can use this plot:
And find that:
\$I_{D1} = 2A\$ and \$ V_{GS1} = 4.8V\$
\$I_{D2} = 4A\$ and \$ V_{GS2} = 5.5V\$
We have \$V_TH = -3.11V\$ and \$K = 1.4 \$
And finally, in LTSpice we can use this statement:
.model p1 PMOS (LEVEL=2 KP=1.4 VTO=-3.11)
But most of the time we can find a spice model of a MOSFET on google.
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Where are you getting the 12 V from? Also how did you model the PMOS (put VTO and KP)? – Hector Feb 05 '20 at 18:40
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@Hector You don't understand what G36 is doing. He made a testbench in order to play with the parameters to test if he can get the Rds_on etc that you want. The 12 V is a source in the simulator and only used in this testbench. – Bimpelrekkie Feb 05 '20 at 21:24
P-channel MOSFET that can produce a max of -34 A
MOSFETs don't produce current, this PMOS has a maximum rating of \$I_D\$ = -34 A.
In principle you can change the generic PMOS model parameters such that it will model a behavior that is somewhat to that PMOS. But it will be a hell of a job even if you know what you're doing. I would not even consider doing that.
Instead I would make a model based on a voltage controlled switch (like a relay), at a resistor of value \$R_{DS,on}\$ in series with the switch.

simulate this circuit – Schematic created using CircuitLab
Make the relay switch on when Vgs > Vt + 0.5 V for example. Since it's an ideal model we can make the coil resistance as high as we like, for example 10 Mohm.
Optionally add a gate-source capacitor \$C_{GS}\$ to model the input capacitance. I'm ignoring the Gate-Drain capacitance which is important when you want to do fast switching.
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This is not efficient seeing as I need to implement 6 different control circuits. This means that I not only have to use 6 of these Power PMOS, but also 6 NMOS – Hector Feb 05 '20 at 18:43
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Again, you fail to understand an answer. I'm not suggesting that you use relays. The relay is used to model the MOSFETs for which you do not have the correct model parameters. – Bimpelrekkie Feb 05 '20 at 21:26



